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TPN2R805PL,L1Q
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TPN2R805PL,L1Q

X35 PB-F POWER MOSFET TRANSISTOR
型号
TPN2R805PL,L1Q
制造商/品牌
Toshiba Semiconductor and Storage
系列
U-MOSIX-H
零件状态
Active
包装
-
技术
MOSFET (Metal Oxide)
工作温度
175°C
安装类型
Surface Mount
封装/箱体
8-PowerVDFN
供应商器件封装
8-TSON Advance (3.3x3.3)
功率耗散（最大）
2.67W (Ta), 104W (Tc)
场效应晶体管类型
N-Channel
场效应晶体管特性
-
漏源电压 (Vdss)
45V
电流 - 连续漏极 (Id) @ 25�C
139A (Ta), 80A (Tc)
Rds On（最大值）@ Id、Vgs
2.8 mOhm @ 40A, 10V
Vgs(th)（最大值）@Id
2.4V @ 300µA
栅极电荷 (Qg) (最大值) @ Vgs
39nC @ 10V
输入电容 (Ciss) (最大值) @ Vds
3.2nF @ 22.5V
驱动电压（最大导通电阻、最小导通电阻）
4.5V, 10V
电压 (最大值)
±20V
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有货 51771 PCS
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