Toshiba Semiconductor and Storage
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TPN22006NH,LQ
数据表

TPN22006NH,LQ

MOSFET N CH 60V 9A 8-TSON
型号
TPN22006NH,LQ
制造商/品牌
Toshiba Semiconductor and Storage
系列
U-MOSVIII-H
零件状态
Active
包装
Cut Tape (CT)
技术
MOSFET (Metal Oxide)
工作温度
150°C (TJ)
安装类型
Surface Mount
封装/箱体
8-PowerVDFN
供应商器件封装
8-TSON Advance (3.3x3.3)
功率耗散（最大）
700mW (Ta), 18W (Tc)
场效应晶体管类型
N-Channel
场效应晶体管特性
-
漏源电压 (Vdss)
60V
电流 - 连续漏极 (Id) @ 25�C
9A (Ta)
Rds On（最大值）@ Id、Vgs
22 mOhm @ 4.5A, 10V
Vgs(th)（最大值）@Id
4V @ 100µA
栅极电荷 (Qg) (最大值) @ Vgs
12nC @ 10V
输入电容 (Ciss) (最大值) @ Vds
710pF @ 30V
驱动电压（最大导通电阻、最小导通电阻）
6.5V, 10V
电压 (最大值)
±20V
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