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TK31N60W,S1VF
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TK31N60W,S1VF

MOSFET N CH 600V 30.8A TO247
型号
TK31N60W,S1VF
制造商/品牌
Toshiba Semiconductor and Storage
系列
DTMOSIV
零件状态
Active
包装
Tube
技术
MOSFET (Metal Oxide)
工作温度
150°C (TJ)
安装类型
Through Hole
封装/箱体
TO-247-3
供应商器件封装
TO-247
功率耗散（最大）
230W (Tc)
场效应晶体管类型
N-Channel
场效应晶体管特性
Super Junction
漏源电压 (Vdss)
600V
电流 - 连续漏极 (Id) @ 25�C
30.8A (Ta)
Rds On（最大值）@ Id、Vgs
88 mOhm @ 15.4A, 10V
Vgs(th)（最大值）@Id
3.7V @ 1.5mA
栅极电荷 (Qg) (最大值) @ Vgs
86nC @ 10V
输入电容 (Ciss) (最大值) @ Vds
3000pF @ 300V
驱动电压（最大导通电阻、最小导通电阻）
10V
电压 (最大值)
±30V
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有货 14002 PCS
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