购买 Toshiba Semiconductor and Storage TK160F10N1L,LQ X35 PB-F POWER MOSFET TRANSISTOR - 益茂讯

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TK160F10N1L,LQ

X35 PB-F POWER MOSFET TRANSISTOR

型号

TK160F10N1L,LQ

制造商/品牌

Toshiba Semiconductor and Storage

系列

U-MOSVIII-H

零件状态

Active

包装

-

技术

MOSFET (Metal Oxide)

工作温度

175°C

安装类型

Surface Mount

封装/箱体

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

供应商器件封装

TO-220SM(W)

功率耗散（最大）

375W (Tc)

场效应晶体管类型

N-Channel

场效应晶体管特性

-

漏源电压 (Vdss)

100V

电流 - 连续漏极 (Id) @ 25�C

160A (Ta)

Rds On（最大值）@ Id、Vgs

2.4 mOhm @ 80A, 10V

Vgs(th)（最大值）@Id

3.5V @ 1mA

栅极电荷 (Qg) (最大值) @ Vgs

122nC @ 10V

输入电容 (Ciss) (最大值) @ Vds

10100pF @ 10V

驱动电压（最大导通电阻、最小导通电阻）

6V, 10V

电压 (最大值)

±20V

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