购买 Toshiba Semiconductor and Storage TK13E25D,S1X(S MOSFET N-CH 250V 13A TO-220AB - 益茂讯

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TK13E25D,S1X(S

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TK13E25D,S1X(S

MOSFET N-CH 250V 13A TO-220AB

型号

TK13E25D,S1X(S

制造商/品牌

Toshiba Semiconductor and Storage

系列

-

零件状态

Active

包装

Tube

技术

MOSFET (Metal Oxide)

工作温度

150°C (TJ)

安装类型

Through Hole

封装/箱体

TO-220-3

供应商器件封装

TO-220-3

功率耗散（最大）

102W (Tc)

场效应晶体管类型

N-Channel

场效应晶体管特性

-

漏源电压 (Vdss)

250V

电流 - 连续漏极 (Id) @ 25�C

13A (Ta)

Rds On（最大值）@ Id、Vgs

250 mOhm @ 6.5A, 10V

Vgs(th)（最大值）@Id

3.5V @ 1mA

栅极电荷 (Qg) (最大值) @ Vgs

25nC @ 10V

输入电容 (Ciss) (最大值) @ Vds

1100pF @ 100V

驱动电压（最大导通电阻、最小导通电阻）

10V

电压 (最大值)

±20V

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TK13E25D,S1X(S MOSFET N-CH 250V 13A TO-220AB

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