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2SK545-11D-TB-E
更多信息 数据表

2SK545-11D-TB-E

JFET N-CH 1MA 125MW CP
型号
2SK545-11D-TB-E
制造商/品牌
ON Semiconductor
系列
-
零件状态
Active
包装
Tape & Reel (TR)
工作温度
-
安装类型
Surface Mount
封装/箱体
TO-236-3, SC-59, SOT-23-3
功率 - 最大
125mW
供应商器件封装
3-CP
场效应晶体管类型
N-Channel
漏源电压 (Vdss)
40V
输入电容 (Ciss) (最大值) @ Vds
1.7pF @ 10V
击穿电压 (V(BR)GSS)
-
电流 - 漏极 (Idss) @ Vds (Vgs=0)
60µA @ 10V
最大电流消耗 (Id)
1mA
电压 - 截止 (VGS 关闭) @ Id
1.5V @ 1µA
电阻——RDS(On)
-
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关键词 2SK545-11D-TB-E
2SK545-11D-TB-E 电子元件
2SK545-11D-TB-E 销售
2SK545-11D-TB-E 供应商
2SK545-11D-TB-E 分销商
2SK545-11D-TB-E 数据表
2SK545-11D-TB-E 图片
2SK545-11D-TB-E 报价
2SK545-11D-TB-E 提供
2SK545-11D-TB-E 最低价格
2SK545-11D-TB-E 搜索
2SK545-11D-TB-E 购买
2SK545-11D-TB-E 芯片