二极管/桥式整流器

VR=150V IO=3A VF=0.95V@3A

DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 1A Forward voltage drop (Vf): 1.1V@1A Reverse current (Ir): 10uA@1kV Forward surge current (Ifsm): 50A Working temperature: -55℃~+150℃@(Tj)

40V,2A,VF=0.55V@2A

I(AV) 60 VRRM(V) 400 IFsM(A) 480 VFM(V) 1.05 VFMI(AV)(A) 60 IRM@VRRM(μA) 0.1 trr(ns) 50

DC Reverse Withstand Voltage (Vr) 400 Average Rectified Current (Io) 3 Forward Surge Current (Ifsm) 125 Reverse Current (Ir) 5 Reverse Recovery Time (trr) 35

The Schottky diode is suitable for low forward voltage drop and low leakage current, and adopts chip scale (CSP) encapsulation to reduce board space. The low thermal resistance allows designers to tackle the challenge of achieving greater energy efficiency and meeting reduced space requirements.