二极管/桥式整流器

Diode configuration: Independent DC reverse withstand voltage (Vr): 800V Average rectified current (Io): 5A Forward voltage drop (Vf): 1.68V@5A Reverse current (Ir): 5uA@800V Reverse recovery time ( trr): 35ns Operating temperature: -55℃~+150℃@(Tj)

40V,2A,VF=0.43V@2A

40V,2A,VF=0.43V@2A

China Taiwan groove chip LOW VF≧0.45

This switching diode is suitable for high speed switching applications. This device features a SOD-323 surface mount encapsulation suitable for automatic insertion.

This high voltage switching diode is suitable for high voltage, high speed switching applications. This dual diode device consists of two high voltage switching diodes with series encapsulation, using SOT-23 surface mount encapsulation.

DC reverse withstand voltage (Vr) 40 Average rectified current (Io) 2 Reverse current (Ir) 0.5

DC reverse withstand voltage (Vr) 40 Average rectified current (Io) 2 Reverse current (Ir) 0.5