购买 Toshiba Semiconductor and Storage TPN14006NH,L1Q MOSFET N CH 60V 13A 8TSON-ADV - 益茂讯

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TPN14006NH,L1Q

数据表

TPN14006NH,L1Q

MOSFET N CH 60V 13A 8TSON-ADV

型号

TPN14006NH,L1Q

制造商/品牌

Toshiba Semiconductor and Storage

系列

U-MOSVIII-H

零件状态

Discontinued at Digi-Key

包装

Digi-Reel®

技术

MOSFET (Metal Oxide)

工作温度

150°C (TJ)

安装类型

Surface Mount

封装/箱体

8-PowerVDFN

供应商器件封装

8-TSON Advance (3.3x3.3)

功率耗散（最大）

700mW (Ta), 30W (Tc)

场效应晶体管类型

N-Channel

场效应晶体管特性

-

漏源电压 (Vdss)

60V

电流 - 连续漏极 (Id) @ 25�C

13A (Ta)

Rds On（最大值）@ Id、Vgs

14 mOhm @ 6.5A, 10V

Vgs(th)（最大值）@Id

4V @ 200µA

栅极电荷 (Qg) (最大值) @ Vgs

15nC @ 10V

输入电容 (Ciss) (最大值) @ Vds

1300pF @ 30V

驱动电压（最大导通电阻、最小导通电阻）

6.5V, 10V

电压 (最大值)

±20V

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