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NVMFD5877NLT1G
数据表

NVMFD5877NLT1G

MOSFET 2N-CH 60V 6A 8SOIC
型号
NVMFD5877NLT1G
制造商/品牌
ON Semiconductor
系列
-
零件状态
Active
包装
Cut Tape (CT)
工作温度
-55°C ~ 175°C (TJ)
安装类型
Surface Mount
封装/箱体
8-PowerTDFN
功率 - 最大
3.2W
供应商器件封装
8-DFN (5x6) Dual Flag (SO8FL-Dual)
场效应晶体管类型
2 N-Channel (Dual)
场效应晶体管特性
Logic Level Gate
漏源电压 (Vdss)
60V
电流 - 连续漏极 (Id) @ 25�C
6A
Rds On（最大值）@ Id、Vgs
39 mOhm @ 7.5A, 10V
Vgs(th)（最大值）@Id
3V @ 250µA
栅极电荷 (Qg) (最大值) @ Vgs
20nC @ 10V
输入电容 (Ciss) (最大值) @ Vds
540pF @ 25V
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