光耦/LED/数码管/光电器件

These devices consist of a gallium arsenide infrared light emitting diode optically coupled to a monolithic silicon phototransistor detector in a small surface mount plastic encapsulation. It is suitable for high-density applications without the need for through-board mounting.

The MOC3081M, MOC3082M, and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector, performing the function of a zero-voltage crossing double-sided triac driver. These devices can be used with discrete power triacs to interface logic systems with 240 VAC line-powered devices such as solid state relays, industrial controls, motors, solenoid valves, and consumer equipment.

The FOD8320 is a 2.5A output current gate drive optocoupler capable of driving medium power IGBT/MOSFET. It is suitable for fast switching drive of power IGBTs and MOSFETs used in motor control inverter applications and high performance power systems. It utilizes ON Semiconductor's Optoplanar coplanar encapsulation technology and optimized IC design for reliable high isolation voltage and high noise immunity. It consists of a gallium aluminum arsenide (AlGaAs) infrared light-emitting diode (LED) optically coupled to an integrated circuit with a high-speed driver for a push-pull MOSFET output stage. The device features a wide body, 5-pin, small outline plastic encapsulation.

The MOCD213M device consists of two GaAs infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors in a small surface mount plastic encapsulation. It is suitable for high-density applications without the need for through-board mounting.