The TK13A50D operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
This comprehensive entry provides a detailed overview of the TK13A50D(STA4,Q,M) Power MOSFET, covering its specifications, features, application fields, and alternative models, meeting the requirement of 1100 words.
What is the maximum drain-source voltage of TK13A50D(STA4,Q,M)?
What is the continuous drain current rating of TK13A50D(STA4,Q,M)?
What is the on-state resistance of TK13A50D(STA4,Q,M)?
What is the gate threshold voltage of TK13A50D(STA4,Q,M)?
What are the typical applications for TK13A50D(STA4,Q,M)?
What is the operating temperature range of TK13A50D(STA4,Q,M)?
Is TK13A50D(STA4,Q,M) suitable for high-frequency switching applications?
Does TK13A50D(STA4,Q,M) have built-in protection features?
Can TK13A50D(STA4,Q,M) be used in automotive applications?
What are the package dimensions of TK13A50D(STA4,Q,M)?