ON Semiconductor
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OPB867N55
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OPB867N55

Product Overview

  • Category: Optoelectronics
  • Use: Optical sensor for object detection and position sensing
  • Characteristics: High sensitivity, compact size, reliable performance
  • Package: Through-hole package, leaded
  • Essence: Utilizes infrared light to detect objects
  • Packaging/Quantity: Available in reels of 1000 units

Specifications

  • Operating Voltage: 4.5V to 16V
  • Output Type: Phototransistor
  • Sensing Distance: Up to 3mm
  • Wavelength: 890nm

Detailed Pin Configuration

  1. Anode
  2. Cathode
  3. Collector
  4. Emitter

Functional Features

  • High sensitivity to infrared light
  • Fast response time
  • Low power consumption

Advantages

  • Compact size allows for versatile installation
  • Reliable performance in various environmental conditions
  • Low power consumption prolongs battery life in portable devices

Disadvantages

  • Limited sensing distance compared to some alternatives
  • Susceptible to interference from ambient infrared sources

Working Principles

The OPB867N55 operates by emitting an infrared light beam and detecting the reflection off nearby objects. When an object is present within the sensing range, the phototransistor output is activated, signaling the presence of the object.

Detailed Application Field Plans

  1. Object detection in automated assembly lines
  2. Position sensing in robotics and automation systems
  3. Proximity sensing in consumer electronics

Detailed and Complete Alternative Models

  1. OPB9000 - Longer sensing distance but larger footprint
  2. OPB7000 - Lower power consumption but reduced sensitivity

Note: The information provided is based on the product's specifications at the time of writing and may be subject to change.

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10个与OPB867N55在技术解决方案中的应用相关的常见问题及解答

  1. What is OPB867N55?

    • OPB867N55 is a high-performance N-channel power MOSFET designed for various technical solutions requiring efficient power management.

  2. What are the key specifications of OPB867N55?

    • The key specifications include a drain-source voltage (VDS) of 55V, continuous drain current (ID) of 80A, low on-resistance (RDS(on)), and a compact package for easy integration.

  3. In what applications can OPB867N55 be used?

    • OPB867N55 is commonly used in applications such as motor control, power supplies, DC-DC converters, LED lighting, and automotive systems.

  4. What are the thermal characteristics of OPB867N55?

    • The MOSFET features low thermal resistance and efficient heat dissipation, making it suitable for high-power applications.

  5. How does OPB867N55 contribute to energy efficiency?

    • OPB867N55's low on-resistance and high current-handling capabilities help minimize power losses and improve overall system efficiency.

  6. Is OPB867N55 suitable for automotive applications?

    • Yes, OPB867N55 is designed to meet the stringent requirements of automotive systems, making it suitable for use in electric vehicles, battery management, and other automotive electronics.

  7. Does OPB867N55 require any special gate driving considerations?

    • While OPB867N55 has a standard gate drive requirement, it is important to ensure proper gate voltage and drive circuitry for optimal performance.

  8. Can OPB867N55 be used in parallel configurations for higher current handling?

    • Yes, OPB867N55 can be paralleled to increase current-handling capability, but careful attention should be paid to current sharing and thermal management.

  9. What are the recommended PCB layout guidelines for using OPB867N55?

    • The datasheet provides detailed PCB layout recommendations to minimize parasitic effects and optimize performance, including proper placement of decoupling capacitors and thermal vias.

  10. Are there any known reliability issues or failure modes associated with OPB867N55?

    • OPB867N55 is designed for high reliability, but it's important to adhere to recommended operating conditions and application guidelines to ensure long-term performance and reliability.