KSC815CYTA
Product Overview
- Belongs to: Semiconductor category
- Use: Amplification and switching in electronic circuits
- Characteristics: High gain, low noise, and high frequency capability
- Package: TO-92 package
- Essence: NPN silicon epitaxial planar transistor
- Packaging/Quantity: Typically available in reels of 2000 units
Specifications
- Maximum Collector-Base Voltage (Vcbo): 30V
- Maximum Collector-Emitter Voltage (Vceo): 20V
- Maximum Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 625mW
- Transition Frequency (ft): 100MHz
- Noise Figure: 4dB
Detailed Pin Configuration
- Emitter (E)
- Base (B)
- Collector (C)
Functional Features
- High voltage gain
- Low noise figure
- Suitable for high-frequency applications
- Small signal amplification
Advantages
- Versatile application range
- Low noise performance
- High frequency capability
Disadvantages
- Limited power handling capacity
- Sensitivity to temperature variations
Working Principles
The KSC815CYTA operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers across its semiconductor junctions to amplify or switch electronic signals.
Detailed Application Field Plans
- Audio Amplification: Utilized in audio amplifier circuits due to its low noise characteristics.
- Radio Frequency (RF) Circuits: Suitable for RF amplification due to its high frequency capability.
- Sensor Interfaces: Used in sensor interface circuits due to its small signal amplification capabilities.
Detailed and Complete Alternative Models
- 2N3904: Similar NPN transistor with comparable characteristics.
- BC547: Another NPN transistor commonly used in similar applications.
This comprehensive entry provides a detailed understanding of the KSC815CYTA semiconductor, including its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
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