PSMN7R6-100BSEJ

Introduction

The PSMN7R6-100BSEJ is a power MOSFET belonging to the category of semiconductor devices. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor device
• Use: Power switching applications
• Characteristics: High voltage capability, low on-state resistance, fast switching speed
• Package: TO-220AB
• Essence: Power MOSFET for efficient power management
• Packaging/Quantity: Typically packaged in reels of 250 units

Specifications

• Voltage Rating: 100V
• Current Rating: 30A
• On-State Resistance: 7.6mΩ
• Gate-Source Voltage (Max): ±20V
• Operating Temperature Range: -55°C to 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220AB

Detailed Pin Configuration

The PSMN7R6-100BSEJ features a standard TO-220AB package with three pins: 1. Gate (G): Input pin for controlling the switching operation 2. Drain (D): Output pin connected to the load 3. Source (S): Ground reference for the MOSFET

Functional Features

• High Voltage Capability: The MOSFET can handle high voltage levels, making it suitable for various power applications.
• Low On-State Resistance: This feature minimizes power losses and enhances efficiency during conduction.
• Fast Switching Speed: Enables rapid switching transitions, beneficial for applications requiring quick response times.

Advantages and Disadvantages

Advantages: - Efficient Power Management: Enables effective control and regulation of power in diverse applications. - Low Power Dissipation: Reduces heat generation and enhances overall system reliability.

Disadvantages: - Sensitivity to Overvoltage: Requires additional protection circuitry to prevent damage from voltage spikes. - Gate Drive Complexity: May necessitate specialized drive circuits for optimal performance.

Working Principles

The PSMN7R6-100BSEJ operates based on the principle of field-effect transistors. When a suitable voltage is applied to the gate terminal, it modulates the conductivity between the drain and source, allowing or blocking the flow of current through the device.

Detailed Application Field Plans

The PSMN7R6-100BSEJ finds extensive use in various applications, including but not limited to: - Switched-Mode Power Supplies - Motor Control Systems - DC-DC Converters - Inverters - Electronic Load Switches

Detailed and Complete Alternative Models

• PSMN7R0-100BSE: Similar voltage rating with lower current capability
• PSMN7R5-100BSE: Slightly higher on-state resistance but lower gate-source voltage rating
• PSMN7R6-100BSE: Identical specifications with different packaging options

In conclusion, the PSMN7R6-100BSEJ power MOSFET offers high voltage capability, low on-state resistance, and fast switching speed, making it a versatile choice for power switching applications across various industries.

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