PSMN2R0-60PSRQ
Product Overview
Category: Power MOSFET
Use: High-efficiency power conversion applications
Characteristics: Low on-state resistance, high switching speed, low gate charge
Package: TO-220, D2PAK, and DPAK
Essence: Power MOSFET for efficient power conversion
Packaging/Quantity: Tape and reel, 800 units per reel
Specifications
- Drain-source voltage: 60V
- Continuous drain current: 100A
- RDS(on): 2.0mΩ
- Total gate charge: 50nC
- Gate-source voltage: ±20V
Detailed Pin Configuration
The PSMN2R0-60PSRQ has a standard pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features
- Low on-state resistance for high efficiency
- High switching speed for fast operation
- Low gate charge for reduced drive requirements
Advantages and Disadvantages
Advantages: - High efficiency in power conversion - Fast switching speed - Low drive requirements
Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to overvoltage conditions
Working Principles
The PSMN2R0-60PSRQ operates based on the principles of field-effect transistors, utilizing its low on-state resistance and high switching speed to efficiently control power flow in various applications.
Detailed Application Field Plans
- Switching Power Supplies: Utilized in high-efficiency DC-DC converters for telecom and server applications.
- Motor Control: Used in motor drive applications for improved energy efficiency and performance.
- Inverters: Employed in solar inverters and UPS systems for efficient power conversion.
Detailed and Complete Alternative Models
- PSMN2R6-40YS: Similar specifications with lower RDS(on)
- PSMN4R3-30YS: Higher voltage rating with comparable characteristics
- PSMN8R5-100YS: Higher current handling capability with slightly higher RDS(on)
This comprehensive entry provides an in-depth understanding of the PSMN2R0-60PSRQ, covering its product details, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
10个与PSMN2R0-60PSRQ在技术解决方案中的应用相关的常见问题及解答
What is the PSMN2R0-60PSRQ?
- The PSMN2R0-60PSRQ is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in high-power applications.
What is the maximum voltage and current rating of PSMN2R0-60PSRQ?
- The PSMN2R0-60PSRQ has a maximum voltage rating of 60V and a current rating of 100A.
What are the typical applications of PSMN2R0-60PSRQ?
- Typical applications include motor control, power supplies, and inverters in industrial and automotive systems.
What is the on-resistance of PSMN2R0-60PSRQ?
- The on-resistance of PSMN2R0-60PSRQ is typically around 2.0 milliohms.
Is PSMN2R0-60PSRQ suitable for high-frequency switching applications?
- Yes, PSMN2R0-60PSRQ is designed for high-frequency switching due to its low on-resistance and fast switching characteristics.
Does PSMN2R0-60PSRQ require a heatsink for operation?
- Depending on the application and power dissipation, a heatsink may be required to ensure proper thermal management.
What is the package type of PSMN2R0-60PSRQ?
- PSMN2R0-60PSRQ is available in a TO-220AB package, which is commonly used for high-power discrete components.
Can PSMN2R0-60PSRQ be used in parallel to increase current handling capability?
- Yes, PSMN2R0-60PSRQ can be used in parallel to increase the overall current handling capability in a circuit.
Are there any recommended gate driver ICs for PSMN2R0-60PSRQ?
- Several gate driver ICs are compatible with PSMN2R0-60PSRQ, such as IR2110 and IRS21844, which provide efficient and reliable drive signals.
What are the key thermal considerations when using PSMN2R0-60PSRQ in a design?
- Proper thermal management, including heatsinking and airflow, is crucial to ensure the PSMN2R0-60PSRQ operates within its specified temperature limits for long-term reliability.