PSMN006-20K,518

Product Overview

Category: Power MOSFET
Use: High-efficiency power management
Characteristics: Low on-state resistance, high switching speed
Package: TO-220AB
Essence: Advanced power semiconductor technology
Packaging/Quantity: Tube/50 units

Specifications

• Voltage - Drain-Source Breakdown (V(BR)DSS): 60V
• Current - Continuous Drain (Id) @ 25°C: 120A
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 60A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 250µA
• Gate Charge (Qg) @ Vgs: 110nC @ 10V

Detailed Pin Configuration

1. Gate
2. Drain
3. Source

Functional Features

• Low on-state resistance for minimal conduction losses
• High switching speed for efficient power management
• Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages: - High efficiency in power management applications - Reduced power dissipation - Enhanced thermal performance

Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to voltage spikes

Working Principles

The PSMN006-20K,518 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is ideal for use in high-current, high-frequency applications such as switch-mode power supplies, motor control, and electronic lighting ballasts.

Detailed and Complete Alternative Models

• IRF540N
• FDP8878
• STP55NF06L

Note: The alternative models listed above are provided for reference and may require additional evaluation based on specific application requirements.

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This entry provides a comprehensive overview of the PSMN006-20K,518, covering its product details, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.