Nexperia USA Inc.
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PHB18NQ10T,118
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PHB18NQ10T,118

Product Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High efficiency, low on-resistance, fast switching speed
  • Package: D2PAK (TO-263)
  • Essence: N-channel enhancement mode field-effect transistor
  • Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

  • Voltage Rating: 100V
  • Continuous Drain Current: 18A
  • RDS(ON): 10mΩ
  • Gate Threshold Voltage: 2.5V
  • Maximum Power Dissipation: 75W

Detailed Pin Configuration

  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source

Functional Features

  • Fast switching speed for high efficiency
  • Low on-resistance for reduced power loss
  • Enhanced thermal performance for reliability

Advantages

  • High efficiency in power switching applications
  • Low power dissipation
  • Reliable thermal performance

Disadvantages

  • Higher cost compared to some alternative models
  • Sensitive to static electricity

Working Principles

The PHB18NQ10T,118 operates as an N-channel enhancement mode field-effect transistor, allowing current to flow when a voltage is applied to the gate terminal. This enables efficient power switching with minimal power loss.

Detailed Application Field Plans

  • Switching power supplies
  • Motor control
  • DC-DC converters
  • Inverters

Detailed and Complete Alternative Models

  • IRF1010E: Similar voltage and current ratings
  • FDP8878: Lower cost alternative with comparable specifications
  • IPP60R190C6: Higher voltage rating and lower on-resistance

This comprehensive entry provides a detailed overview of the PHB18NQ10T,118, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

10个与PHB18NQ10T,118在技术解决方案中的应用相关的常见问题及解答

  1. What is PHB18NQ10T,118?

    • PHB18NQ10T,118 is a N-channel 100 V MOSFET with a low on-resistance and high current-handling capability, commonly used in power management applications.

  2. What are the key features of PHB18NQ10T,118?

    • The key features include a low on-resistance of 18 mΩ, a 100 V drain-source voltage rating, and a high current-handling capability suitable for power management solutions.

  3. What are the typical applications of PHB18NQ10T,118?

    • Typical applications include power supplies, motor control, battery management, and other power management solutions where a high-current, low on-resistance MOSFET is required.

  4. What is the maximum drain current of PHB18NQ10T,118?

    • The maximum drain current is typically around 120 A, making it suitable for high-power applications.

  5. What is the gate-source voltage for turning on PHB18NQ10T,118?

    • The gate-source voltage required to turn on the MOSFET is typically around 10 V.

  6. Does PHB18NQ10T,118 require a heat sink in high-power applications?

    • Yes, in high-power applications or when operating at high currents, it is recommended to use a heat sink to dissipate the heat generated by the MOSFET.

  7. What is the thermal resistance of PHB18NQ10T,118?

    • The typical junction-to-ambient thermal resistance is around 40°C/W, which is an important consideration for thermal management in the application.

  8. Can PHB18NQ10T,118 be used in automotive applications?

    • Yes, it is suitable for automotive applications where high-current switching and low on-resistance are required.

  9. What are the recommended operating conditions for PHB18NQ10T,118?

    • The recommended operating temperature range is -55°C to 175°C, and it should be operated within the specified voltage and current limits.

  10. Are there any specific layout considerations for using PHB18NQ10T,118 in a PCB design?

    • It is important to minimize the parasitic inductance in the layout, use proper gate drive circuitry, and ensure good thermal management to maximize the performance of PHB18NQ10T,118 in the application.