PHB110NQ08T,118

Product Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High power handling capacity, low on-resistance, fast switching speed
• Package: TO-263AB
• Essence: Efficient power management
• Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

• Voltage - Drain-Source Breakdown (V(BR)DSS): 80V
• Current - Continuous Drain (Id) @ 25°C: 110A
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 55A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 250µA
• Gate Charge (Qg) @ Vgs: 60nC @ 10V

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for efficient power management
• High current handling capacity for robust performance

Advantages and Disadvantages

• Advantages:
  • High power handling capacity
  • Low on-resistance
  • Fast switching speed
• Disadvantages:
  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The PHB110NQ08T,118 operates based on the principles of field-effect transistors, utilizing the control of voltage on the gate terminal to regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of power switching applications, including motor control, power supplies, and inverters. Its high current handling capacity and low on-resistance make it ideal for demanding industrial and automotive applications.

Detailed and Complete Alternative Models

• PHB110NQ08T: Similar specifications with different packaging
• PHB120NQ08T: Higher voltage rating with similar characteristics
• PHB100NQ08T: Lower on-resistance with slightly lower current handling capacity

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