IS66WVE2M16TCLL-70BLI

Product Overview

Category

IS66WVE2M16TCLL-70BLI belongs to the category of high-speed synchronous dynamic random access memory (SDRAM) modules.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-performance memory for data storage and retrieval.

Characteristics

• High-speed operation: The IS66WVE2M16TCLL-70BLI offers fast data transfer rates, making it suitable for applications that demand quick access to large amounts of data.
• Large capacity: With a capacity of 2 megabytes (16 megabits), this SDRAM module provides ample space for storing and processing data.
• Low power consumption: The module is designed to operate efficiently with low power requirements, contributing to energy savings in electronic devices.
• Reliable performance: The IS66WVE2M16TCLL-70BLI is built with high-quality components and undergoes rigorous testing to ensure reliable and stable operation.
• Compact package: This SDRAM module is packaged in a small form factor, allowing for easy integration into various electronic devices.

Packaging/Quantity

The IS66WVE2M16TCLL-70BLI is typically packaged in anti-static trays or tape and reel packaging. The quantity per package varies depending on the manufacturer's specifications but is commonly available in multiples of 100 units.

Specifications

• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 2 Megabytes x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 70ns (nanoseconds)
• Interface: Parallel
• Package Type: Ball Grid Array (BGA)
• Pin Count: 54 pins

Detailed Pin Configuration

The IS66WVE2M16TCLL-70BLI has a total of 54 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /DQM0
44. /DQM1
45. /DQS0
46. /DQS1
47. DM0
48. DM1
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS

Functional Features

The IS66WVE2M16TCLL-70BLI offers the following functional features:

• Burst mode operation: The module supports burst read and write operations, allowing for efficient data transfer.
• Auto-refresh and self-refresh modes: It includes built-in mechanisms for automatic refreshing of data, ensuring data integrity and reliability.
• Programmable CAS latency: The CAS latency can be adjusted to optimize performance based on specific system requirements.
• On-die termination (ODT): This feature helps reduce signal reflections and improve signal integrity by matching the impedance of the memory module with the transmission line.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data access and processing.
• Large capacity provides ample storage space for data-intensive applications.
• Low power consumption contributes to energy efficiency.
• Reliable performance ensures stable operation in demanding environments.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• The IS66WVE2M16TCLL-70BLI may have limited availability or compatibility with certain older systems due to its specific specifications and interface requirements.
• The small form factor of the package may make it more challenging to handle during installation or replacement.

Working Principles

The IS66WVE2M16TCLL-70BLI operates based on the principles of synchronous dynamic random access memory. It utilizes a clock signal to synchronize data transfers between