IS61WV51216EEBLL-10BLI

Product Overview

Category

IS61WV51216EEBLL-10BLI belongs to the category of semiconductor memory products.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS61WV51216EEBLL-10BLI is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of IS61WV51216EEBLL-10BLI lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS61WV51216EEBLL-10BLI is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 512K words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61WV51216EEBLL-10BLI is as follows:

1. Vcc
2. WE#
3. A0-A18
4. DQ0-DQ15
5. OE#
6. CE#

(Note: This is a simplified representation. Please refer to the datasheet for the complete pin configuration.)

Functional Features

• High-speed random access
• Non-volatile storage
• Low power consumption in standby mode
• Easy interfacing with other components
• Reliable data retention

Advantages and Disadvantages

Advantages

• Fast access time allows for quick data retrieval.
• Low power consumption helps conserve energy.
• Large storage capacity accommodates a wide range of applications.
• Compact package size enables integration into space-constrained devices.
• Reliable performance ensures data integrity.

Disadvantages

• Limited storage capacity compared to other memory technologies like NAND flash.
• Higher cost per bit compared to some alternative memory solutions.
• Susceptible to data loss in case of power failure without proper backup mechanisms.

Working Principles

IS61WV51216EEBLL-10BLI operates based on the principles of static random access memory (SRAM). It stores digital information using flip-flops, which retain their state as long as power is supplied. The stored data can be accessed randomly, allowing for fast read and write operations.

Detailed Application Field Plans

IS61WV51216EEBLL-10BLI finds application in various electronic devices and systems, including but not limited to: - Computers and servers - Networking equipment - Mobile phones and tablets - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61WV51216EEBLL-10BLI include: - MT48LC4M32B2P-6A: 4M x 32-bit SDRAM - CY7C1041DV33-10ZSXI: 4M x 16-bit SRAM - AS6C4008-55BIN: 4M x 8-bit SRAM - K6R4016V1D-UI10: 4M x 16-bit DRAM

(Note: This is not an exhaustive list. There are numerous alternative models available in the market.)

In conclusion, IS61WV51216EEBLL-10BLI is a high-speed, low-power semiconductor memory product primarily used for data storage and retrieval in various electronic devices. Its compact size, large storage capacity, and reliable performance make it suitable for a wide range of applications. However, it has certain limitations such as limited storage capacity and higher cost per bit compared to some alternatives. Understanding its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models can help users make informed decisions when selecting memory solutions for their specific requirements.