IS61NLP102418B-250B3L-TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: Low power consumption, high-speed operation
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Tape and reel, 250 pieces per reel

Specifications

• Memory Type: Non-volatile RAM (Random Access Memory)
• Memory Size: 1 Megabit (128K x 8 bits)
• Operating Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 20 years
• Write/Erase Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The IS61NLP102418B-250B3L-TR IC has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power supply voltage | | 2 | A0-A16 | Address inputs | | 3 | CE | Chip enable input | | 4 | WE | Write enable input | | 5 | OE | Output enable input | | 6-13 | DQ0-DQ7 | Data input/output | | 14 | WP | Write protect input | | 15 | GND | Ground |

... (detailed pin configuration continues)

Functional Features

• Non-volatile storage: The IS61NLP102418B-250B3L-TR retains data even when the power is turned off.
• High-speed operation: Enables fast read and write access to memory.
• Low power consumption: Designed to minimize power usage, making it suitable for battery-powered devices.
• Write protection: The WP pin allows the memory to be write-protected, preventing accidental data modification.

Advantages

• Non-volatile memory: Data is retained even during power loss or system shutdown.
• High-speed operation: Allows for quick access to stored information.
• Low power consumption: Ideal for energy-efficient applications.
• Write protection: Ensures data integrity by preventing unauthorized writes.

Disadvantages

• Limited storage capacity: With a size of 1 Megabit, it may not be sufficient for certain applications requiring larger memory.
• Limited write/erase cycles: The IC has a finite number of write and erase cycles before it may become unreliable.

Working Principles

The IS61NLP102418B-250B3L-TR utilizes non-volatile RAM technology. It stores data using a combination of electrically erasable programmable read-only memory (EEPROM) and static random-access memory (SRAM). The EEPROM portion allows for non-volatile storage, while the SRAM portion enables high-speed read and write operations.

Detailed Application Field Plans

The IS61NLP102418B-250B3L-TR is commonly used in various electronic devices that require non-volatile memory, such as: - Embedded systems - Industrial control systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

• IS61NLP102418A-250B3L-TR
• IS61NLP102418C-250B3L-TR
• IS61NLP102418D-250B3L-TR

These alternative models offer similar functionality and specifications but may differ in certain characteristics or package options.

In conclusion, the IS61NLP102418B-250B3L-TR is a non-volatile RAM integrated circuit with a capacity of 1 Megabit. It offers high-speed operation, low power consumption, and write protection features. While it has limitations in terms of storage capacity and write/erase cycles, it finds applications in various fields such as embedded systems, industrial control, automotive electronics, and medical devices. Alternative models are available for specific requirements or preferences.