IS42S32160F-6BLI-TR

Product Overview

Category

IS42S32160F-6BLI-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S32160F-6BLI-TR is available in a small outline, dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S32160F-6BLI-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in trays or reels and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 512 Megabytes (MB)
• Organization: 32 Megabytes x 16 bits
• Speed: 6 nanoseconds (ns)
• Voltage: 3.3 Volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /DQM0
44. /DQM1
45. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings

Advantages

• Fast data access speeds enhance overall system performance.
• Large storage capacity allows for the handling of extensive data requirements.
• Low power consumption helps to prolong battery life in portable devices.
• Compact package size enables integration into space-constrained designs.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Higher cost compared to other memory technologies like NAND flash.
• Limited endurance compared to non-volatile memory types.
• Requires continuous power supply to retain stored data.

Working Principles

IS42S32160F-6BLI-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending address signals to select the desired location and reading or writing the corresponding data.

Detailed Application Field Plans

IS42S32160F-6BLI-TR finds applications in a wide range of electronic devices, including: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

1. IS42S16320D-7TLI
2. MT48LC32M16A2P-75IT
3. K4H511638C-UCCC

These alternative models offer similar specifications and functionality to IS42S32160F-6BLI-TR and can be considered as suitable replacements depending on specific requirements.

In conclusion, IS42S32160F-6BLI-TR is a high-performance synchronous DRAM module that provides fast data access, large storage capacity, and low power consumption. Its compact package size makes it suitable for various electronic devices. While it has advantages such as improved system performance and reliability, it also has limitations like higher cost and limited endurance. Nonetheless, its working principles and compatibility with different applications make it a valuable component in the field of electronic memory technology.