FF200R12KT4HOSA1

Product Overview

• Category: Power Electronics
• Use: This product is a high-power IGBT module designed for use in industrial and power electronics applications.
• Characteristics: The FF200R12KT4HOSA1 features high power density, low loss, and high ruggedness, making it suitable for demanding applications. It comes in a compact package with advanced thermal management capabilities.
• Package: The module is packaged in a robust housing designed to withstand harsh operating conditions.
• Essence: The essence of the FF200R12KT4HOSA1 lies in its ability to deliver high-performance power switching in a reliable and efficient manner.
• Packaging/Quantity: Each package contains one FF200R12KT4HOSA1 module.

Specifications

• Voltage Rating: 1200V
• Current Rating: 200A
• Module Type: IGBT
• Switching Frequency: Up to 20kHz
• Thermal Resistance: Low junction-to-case thermal resistance for improved heat dissipation
• Isolation Voltage: High isolation voltage for enhanced safety

Detailed Pin Configuration

The FF200R12KT4HOSA1 module features a detailed pin configuration that includes gate, emitter, collector, and auxiliary pins. The pinout is designed to facilitate easy integration into existing power electronic systems.

Functional Features

• High Power Density: The module offers high power density, allowing for compact system designs.
• Low Loss: With low conduction and switching losses, the FF200R12KT4HOSA1 contributes to overall system efficiency.
• High Ruggedness: Designed to withstand high voltage and current stresses, ensuring reliability in demanding environments.
• Advanced Thermal Management: The module incorporates advanced thermal management features to maintain optimal operating temperatures.

Advantages and Disadvantages

Advantages

• High power density enables compact designs
• Low loss contributes to system efficiency
• High ruggedness ensures reliability in demanding conditions
• Advanced thermal management enhances operational performance

Disadvantages

• May require additional cooling measures in extremely high-power applications
• Initial cost may be higher compared to lower-rated modules

Working Principles

The FF200R12KT4HOSA1 operates based on the principles of Insulated Gate Bipolar Transistor (IGBT) technology. When a control signal is applied to the gate terminal, the IGBT allows current flow between the collector and emitter terminals, enabling precise power switching in industrial and power electronics applications.

Detailed Application Field Plans

The FF200R12KT4HOSA1 is well-suited for a wide range of applications, including: - Industrial motor drives - Renewable energy systems - Uninterruptible power supplies (UPS) - Electric vehicle charging systems - Welding equipment - High-power inverters

Detailed and Complete Alternative Models

• FF300R12KT4HOSA1: Higher current rating for more demanding applications
• FF150R12KT4HOSA1: Lower current rating for applications with lower power requirements
• FF200R12KT4: Non-HOSA1 version with similar specifications

In conclusion, the FF200R12KT4HOSA1 is a high-power IGBT module with advanced features and robust design, making it an ideal choice for various industrial and power electronics applications.

Word Count: 464