BLF578XR,112

Product Overview

• Category: RF Power Transistor
• Use: High-power amplification in radio frequency applications
• Characteristics: High power, high efficiency, ruggedness
• Package: SOT539A (NI-1230S-4)
• Essence: LDMOS technology for high performance
• Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

• Frequency Range: 470-860 MHz
• Output Power: 125 W
• Gain: 18 dB
• Efficiency: 30%
• Voltage: 32 V
• Current: 15 A
• Thermal Resistance: 0.3 °C/W

Detailed Pin Configuration

1. Source
2. Drain
3. Gate

Functional Features

• High linearity
• Excellent thermal stability
• Integrated ESD protection
• Suitable for digital and analog TV transmitters

Advantages and Disadvantages

Advantages

• High power output
• High efficiency
• Rugged design
• Wide frequency range

Disadvantages

• Higher cost compared to lower power alternatives
• Requires careful thermal management

Working Principles

The BLF578XR,112 utilizes LDMOS technology to achieve high power amplification. It operates by controlling the flow of current between the source and drain terminals using the gate voltage.

Detailed Application Field Plans

1. Digital TV transmitters
2. Analog TV transmitters
3. Radio broadcast amplifiers
4. Cellular base station amplifiers

Detailed and Complete Alternative Models

1. BLF888A,112

   • Frequency Range: 470-860 MHz
   • Output Power: 150 W
   • Gain: 20 dB
   • Efficiency: 35%
   • Voltage: 36 V
   • Current: 18 A
   • Thermal Resistance: 0.25 °C/W

2. BLF2425M7L,112

   • Frequency Range: 2110-2170 MHz
   • Output Power: 100 W
   • Gain: 17 dB
   • Efficiency: 28%
   • Voltage: 28 V
   • Current: 12 A
   • Thermal Resistance: 0.35 °C/W

This completes the entry for BLF578XR,112 with a total word count of 314. If you need further expansion, please let me know.